Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NHUMD12X

NHUMD12X

Nexperia

NHUMD12/SOT363/SC-88

3000

PEMD9,115

PEMD9,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

254

PUMD17,115

PUMD17,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

855

PBLS2022D,115

PBLS2022D,115

Nexperia

TRANS PREBIAS 1PNP 1PNP 6TSOP

20

PUMD19,115

PUMD19,115

Nexperia

PUMD19 - NPN/PNP RESISTOR-EQUIPP

89950

PUMB19,115

PUMB19,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

0

PEMH30,315

PEMH30,315

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

0

PUMH10,115

PUMH10,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

49770

NHUMB2X

NHUMB2X

Nexperia

NHUMB2/SOT363/SC-88

3000

PUMH20,115

PUMH20,115

Nexperia

TRANS 2NPN PREBIAS 0.3W 6TSSOP

12381

NHUMB11F

NHUMB11F

Nexperia

NHUMB11/SOT363/SC-88

10000

PIMD2,115

PIMD2,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSOP

0

PUMD9,115

PUMD9,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

54226

PBLS1504Y,115

PBLS1504Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

3070

PQMH9Z

PQMH9Z

Nexperia

TRANS NPN/NPN RET 6DFN

4549

PUMB17,115

PUMB17,115

Nexperia

TRANS 2PNP PREBIAS 0.3W 6TSSOP

0

PQMD13Z

PQMD13Z

Nexperia

TRANS NPN/PNP RET 6DFN

3050

PUMD13,135

PUMD13,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

PBLS6023D,115

PBLS6023D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

1958

NHUMH2F

NHUMH2F

Nexperia

NHUMH2/SOT363/SC-88

10000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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