Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NHUMD12F

NHUMD12F

Nexperia

NHUMD12/SOT363/SC-88

9875

PUMD48,115

PUMD48,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

2888

PEMB13,115

PEMB13,115

Nexperia

TRANS 2PNP PREBIAS 0.3W SOT666

0

PRMD12Z

PRMD12Z

Nexperia

PRMD12/SOT1268/DFN1412-6

5000

NHUMD13X

NHUMD13X

Nexperia

NHUMD13/SOT363/SC-88

3000

PUMH10,125

PUMH10,125

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

0

NHUMB9F

NHUMB9F

Nexperia

NHUMB9/SOT363/SC-88

10000

PUMH17F

PUMH17F

Nexperia

PUMH17/SOT363/SC-88

0

PUMB30,115

PUMB30,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

0

PEMH16,115

PEMH16,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

0

PEMH1,115

PEMH1,115

Nexperia

NOW NEXPERIA PEMH1 - SMALL SIGNA

70000

PRMD10Z

PRMD10Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

2500

PEMH11,115

PEMH11,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

17

PQMD10Z

PQMD10Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

0

NHUMH9X

NHUMH9X

Nexperia

NHUMH9/SOT363/SC-88

3000

PEMD10,115

PEMD10,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

PUMD10,125

PUMD10,125

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

970

PUMH10Z

PUMH10Z

Nexperia

PUMH10/SOT363/SC-88

0

PQMD3Z

PQMD3Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

0

PBLS4005Y,115

PBLS4005Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

1947

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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