Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PBLS1501Y,115

PBLS1501Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

2450

NHUMH11F

NHUMH11F

Nexperia

NHUMH11/SOT363/SC-88

9900

PUMH11F

PUMH11F

Nexperia

TRANS 2NPN PREBIAS 0.3W SC-88

0

PEMD4,115

PEMD4,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

0

PBLS6004D,115

PBLS6004D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

3386

PUMH30,115

PUMH30,115

Nexperia

PUMH30 - UPN/NPN DOUBLE RESISTOR

6000

NHUMH9F

NHUMH9F

Nexperia

NHUMH9/SOT363/SC-88

10000

PBLS6001D,115

PBLS6001D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

2907

NHUMD3X

NHUMD3X

Nexperia

NHUMD3/SOT363/SC-88

3000

PRMH11Z

PRMH11Z

Nexperia

PRMH11/SOT1268/DFN1412-6

5076

PEMH9,115

PEMH9,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

546

PEMD6,115

PEMD6,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

PBLS6002D,115

PBLS6002D,115

Nexperia

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

2711

PUMB4,115

PUMB4,115

Nexperia

TRANS 2PNP PREBIAS 0.3W 6TSSOP

0

PRMD3Z

PRMD3Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

5000

PEMH11,315

PEMH11,315

Nexperia

NOW NEXPERIA PEMH11 - SMALL SIGN

28370

PUMB24,115

PUMB24,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

0

PEMH2,115

PEMH2,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

0

PBLS4004Y,115

PBLS4004Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

2199

PUMD9,135

PUMD9,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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