Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PEMB16,115

PEMB16,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

PUMD2/DG/B3,115

PUMD2/DG/B3,115

Nexperia

TRANS RET SC-88

0

PUMB1/DG/B4X

PUMB1/DG/B4X

Nexperia

TRANS PAIR

0

PUMD12/DG/B4X

PUMD12/DG/B4X

Nexperia

TRANS PAIR

0

PUMH2/DG/B4X

PUMH2/DG/B4X

Nexperia

TRANS PAIR

0

PUMH1/DG/B4X

PUMH1/DG/B4X

Nexperia

TRANS PAIR

0

PUMB2/DG/B3,115

PUMB2/DG/B3,115

Nexperia

TRANS RET SC-88

0

PUMD6/ZLF

PUMD6/ZLF

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

PUMD2/DG/B4X

PUMD2/DG/B4X

Nexperia

TRANS PAIR

0

PUMB1/DG/B3,115

PUMB1/DG/B3,115

Nexperia

TRANS RET SC-88

0

PUMD16/ZLX

PUMD16/ZLX

Nexperia

TRANS RET SC-88

0

PUMD12/DG/B3,115

PUMD12/DG/B3,115

Nexperia

TRANS RET SC-88

0

PUMD2/DG/B4F

PUMD2/DG/B4F

Nexperia

TRANS PAIR

0

PUMB2/DG/B4X

PUMB2/DG/B4X

Nexperia

TRANS PAIR

0

PUMD2/ZLX

PUMD2/ZLX

Nexperia

PUMD2/ZLX

0

PUMH1/ZLX

PUMH1/ZLX

Nexperia

PUMH1/ZLX

0

PUMH4/ZLX

PUMH4/ZLX

Nexperia

PUMH4/ZLX

0

PUMH10/ZLH

PUMH10/ZLH

Nexperia

PUMH10/ZLH

0

PUMB11/ZLX

PUMB11/ZLX

Nexperia

PUMB11/ZLX

0

PUMH11/ZLX

PUMH11/ZLX

Nexperia

PUMH11/ZLX

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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