Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMH13,115

PUMH13,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

5977

PEMD15,115

PEMD15,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

NHUMH13F

NHUMH13F

Nexperia

NHUMH13/SOT363/SC-88

10000

PUMD30,115

PUMD30,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

PBLS2024D,115

PBLS2024D,115

Nexperia

TRANS PNP PREBIAS/PNP 6TSOP

0

PQMB11Z

PQMB11Z

Nexperia

TRANS PNP/PNP RET 6DFN

4475

PUMD18,115

PUMD18,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

PEMD13,115

PEMD13,115

Nexperia

NOW NEXPERIA PEMD13 - SMALL SIGN

206470

PQMH13Z

PQMH13Z

Nexperia

TRANS NPN/NPN RET 6DFN

4835

NHUMB13F

NHUMB13F

Nexperia

NHUMB13/SOT363/SC-88

10000

NHUMH1F

NHUMH1F

Nexperia

NHUMH1/SOT363/SC-88

10000

PEMB14,115

PEMB14,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

PEMB18,115

PEMB18,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

PUMH1,115

PUMH1,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

2465

PUMD13,115

PUMD13,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

50275

PBLS4005D,115

PBLS4005D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

3000

PUMD12,135

PUMD12,135

Nexperia

NOW NEXPERIA PUMD12 - SMALL SIGN

611209

NHUMB11X

NHUMB11X

Nexperia

NHUMB11/SOT363/SC-88

3000

PUMB2,115

PUMB2,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

17390

PUMH13F

PUMH13F

Nexperia

PUMH13/SOT363/SC-88

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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