Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PBLS1503Y,115

PBLS1503Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

0

UMA2NTR

UMA2NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

6700

DMC261030R

DMC261030R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

2044

PBLS2021D,115

PBLS2021D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

0

DCX114EH-7

DCX114EH-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

531

NSBC143EPDP6T5G

NSBC143EPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 254MW SOT963

0

DMC261050R

DMC261050R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

11

UMD4NTR

UMD4NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS UMT6

2047

NSB1706DMW5T1G

NSB1706DMW5T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SC70

21410

PBLS4003V,115

PBLS4003V,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

36000

RN49A2,LF(CT

RN49A2,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

65

IMH5AT108

IMH5AT108

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

1930

NSVMUN5235DW1T1G

NSVMUN5235DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

0

XP0431100L

XP0431100L

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

65235

RN1911FE,LF(CT

RN1911FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=I

4000

NSBC143EDP6T5G

NSBC143EDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

0

NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

SS SOT563 RSTR XSTR TR

0

RN2709,LF

RN2709,LF

Toshiba Electronic Devices and Storage Corporation

PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

6000

PBLS1504V,115

PBLS1504V,115

NXP Semiconductors

0.1A 50V 2-ELEMENT NPN AND PNP

15539

IMD6AT108

IMD6AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

4972

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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