Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
ADC144EUQ-7

ADC144EUQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT363 T&R 3K

72000

NSVBA114YDXV6T1G

NSVBA114YDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

DMC266040R

DMC266040R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2663

NSBC114YPDP6T5G

NSBC114YPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT963

2147483647

DMC566060R

DMC566060R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

5990

PEMD48,115

PEMD48,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

RN4611(TE85L,F)

RN4611(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.3W SM6

2895

NSBC123EDXV6T1

NSBC123EDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

36000

NSBC144EDP6T5G

NSBC144EDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

128000

NSBC123JDXV6T5

NSBC123JDXV6T5

SMALL SIGNAL BIPOLAR TRANSISTOR

183831

NHUMH10X

NHUMH10X

Nexperia

NHUMH10/SOT363/SC-88

3000

NSBC123EPDXV6T1G

NSBC123EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

96000

DCX4710H-7

DCX4710H-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

0

DMA961040R

DMA961040R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

1930

SMUN5230DW1T1G

SMUN5230DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

3000

PUMD6,135

PUMD6,135

Nexperia

NOW NEXPERIA PUMD6 - SMALL SIGNA

6600000

NSBA123JDXV6T1G

NSBA123JDXV6T1G

SMALL SIGNAL BIPOLAR TRANSISTOR

283000

PIMN31,115

PIMN31,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSOP

1271

DCX114TU-7-F

DCX114TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

0

PUMD14,115

PUMD14,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
RFQ BOM Call Skype Email
Top