Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
DCX124EUQ-7-F Zetex Semiconductors (Diodes Inc.)	TRANS PREBIAS NPN/PNP 50V SOT363	0
RN1910FE(T5L,F,T) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ES6	905
DDC114YH-7 Zetex Semiconductors (Diodes Inc.)	TRANS 2NPN PREBIAS 0.15W SOT563	4996
RN4906FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.1W ES6	0
DMA261060R Panasonic	TRANS PREBIAS DUAL PNP MINI5	5699
XN0F26300L Panasonic	TRANS PREBIAS DUAL NPN MINI6	3000
NHUMB10F Nexperia	NHUMB10/SOT363/SC-88	10000
DMC964030R Panasonic	TRANS PREBIAS DUAL NPN SSMINI6	8000
PUMB2F Nexperia	PUMB2/SOT363/SC-88	0
DCX114YK-7-F Zetex Semiconductors (Diodes Inc.)	TRANS NPN/PNP PREBIAS 0.3W SC74R	0
EMC4DXV5T1	SMALL SIGNAL BIPOLAR TRANSISTOR	311980
PUMF12,115 NXP Semiconductors	SMALL SIGNAL BIPOLAR TRANSISTOR	0
NSBC114YPDXV6T1	SMALL SIGNAL BIPOLAR TRANSISTOR	379710
PUMD6,125 Nexperia	TRANS PREBIAS NPN/PNP 6TSSOP	0
UMH1NFHATN ROHM Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR	2660
RN4982,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.2W US6	57046
NHUMB9X Nexperia	NHUMB9/SOT363/SC-88	3000
DMC561070R Panasonic	TRANS 2NPN PREBIAS 0.15W SMINI5	5795
UMH11NTN ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W UMT6	852
FMA7AT148 ROHM Semiconductor	TRANS PREBIAS DUAL PNP SMT5	1731

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications