Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PEMH20,115

PEMH20,115

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

3500

IMB4AT110

IMB4AT110

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT6

0

DMC566040R

DMC566040R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

692

NSBC123TDP6T5G

NSBC123TDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

0

XN0621600L

XN0621600L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

4651

DME914C10R

DME914C10R

Panasonic

TRANS NPN PREBIAS/PNP SSMINI6

7782

NSBC124EDXV6T5G

NSBC124EDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

SMUN5312DW1T1G

SMUN5312DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP PREBIAS SOT363

5215

NSBA124EDXV6T1G

NSBA124EDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SOT563

0

XP0621500L

XP0621500L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

3613

NSBC114EPDP6T5G

NSBC114EPDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT963

1181

PEMB9,115

PEMB9,115

Nexperia

TRANS 2PNP PREBIAS 0.3W SOT666

1420

NSBC143TDXV6T1

NSBC143TDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

27986

UMH1N-TP

UMH1N-TP

Micro Commercial Components (MCC)

TRANS 2NPN PREBIAS 0.15W SOT363

0

UMF21NTR

UMF21NTR

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

0

BCR198SH6827XTSA1

BCR198SH6827XTSA1

IR (Infineon Technologies)

TRANS 2PNP PREBIAS 0.25W SOT363

0

NSBC114TDXV6T1

NSBC114TDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

228000

RN4907FE,LF(CT

RN4907FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.1W ES6

861

PEMD17,115

PEMD17,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

RN1708,LF

RN1708,LF

Toshiba Electronic Devices and Storage Corporation

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

5963

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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