Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMC2640L0R

DMC2640L0R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

1279

NSBA113EDXV6T1

NSBA113EDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

44000

PUMH9,115

PUMH9,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

21768

DDA113TU-7-F

DDA113TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2PNP PREBIAS 0.2W SOT363

12000

DMC266060R

DMC266060R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2900

PEMH19,115

PEMH19,115

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

0

NSVBC123JPDXV6T1G

NSVBC123JPDXV6T1G

COMPLEMENTARY BIPOLAR DIGITAL TR

4000

RN2706JE(TE85L,F)

RN2706JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ESV

0

NSVBA143ZDXV6T1G

NSVBA143ZDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP BIPO 60V SOT564

44000

EMG5T2R

EMG5T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

931

UP0431400L

UP0431400L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

2179

PQMD12Z

PQMD12Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

0

DMG963030R

DMG963030R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

7987

PRMH13Z

PRMH13Z

Nexperia

TRANS PREBIAS 2NPN 50V DFN1412-6

1885

DMC264050R

DMC264050R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

360

PUMB3,115

PUMB3,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

0

NSBC114EDP6T5G

NSBC114EDP6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT963

771472000

DDC142JU-7-F

DDC142JU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.2W SOT363

0

PUMH24,115

PUMH24,115

Nexperia

TRANS 2NPN PREBIAS 0.3W 6TSSOP

0

NHUMD2X

NHUMD2X

Nexperia

NHUMD2/SOT363/SC-88

3000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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