Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
NTE5661

NTE5661

NTE Electronics, Inc.

TRIAC 50V 10A TO64

53

NTE56031

NTE56031

NTE Electronics, Inc.

TRIAC-600VRM 40AMP

416

NTE5673

NTE5673

NTE Electronics, Inc.

TRIAC 200V 15A TO48

86

NTE56066

NTE56066

NTE Electronics, Inc.

TRIAC-600VRM 16A

575

NTE5679

NTE5679

NTE Electronics, Inc.

TRIAC-600VRM 40A

444

NTE56064

NTE56064

NTE Electronics, Inc.

TRIAC-800VRM 8A ISOLATED

966

NTE5653

NTE5653

NTE Electronics, Inc.

TRIAC SENS GATE 600V 3A TO5

40

NTE5693

NTE5693

NTE Electronics, Inc.

TRIAC 200V 40A TO48

81

NTE56022

NTE56022

NTE Electronics, Inc.

TRIAC 200V 40A TO 48 ISOL STUD

4

NTE56026

NTE56026

NTE Electronics, Inc.

TRIAC 600V 40A TO 48 ISOL STUD

28

NTE5641

NTE5641

NTE Electronics, Inc.

TRIAC 200V 2.5A TO5

84

NTE5613

NTE5613

NTE Electronics, Inc.

TRIAC 100V 10A TO127

4

NTE5677

NTE5677

NTE Electronics, Inc.

TRIAC 600V 15A TO48

48

NTE56042

NTE56042

NTE Electronics, Inc.

TRIAC-500VRM 16A ISOLATED

360

NTE56018

NTE56018

NTE Electronics, Inc.

TRIAC-800VRM 25A TO220

148

NTE56069

NTE56069

NTE Electronics, Inc.

TRIAC-800VRM 16A ISOLATED

872

NTE56071

NTE56071

NTE Electronics, Inc.

TRIAC-800VRM 25A

807

NTE56033

NTE56033

NTE Electronics, Inc.

TRIAC-45AMP 600V

28

NTE5621

NTE5621

NTE Electronics, Inc.

TRIAC 25V 10A TO127

93

NTE5656

NTE5656

NTE Electronics, Inc.

TRIAC SENS GATE 400V 800MA TO92

22558

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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