Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
NTE56030

NTE56030

NTE Electronics, Inc.

TRIAC-400VRM 40AMP

230

NTE5681

NTE5681

NTE Electronics, Inc.

TRIAC 50V 25A TO48

6

NTE5655

NTE5655

NTE Electronics, Inc.

TRIAC SENS GATE 200V 800MA TO92

23892

NTE56015

NTE56015

NTE Electronics, Inc.

TRIAC-200VRM 25A TO220

98

NTE56006

NTE56006

NTE Electronics, Inc.

TRIAC-400VRM 15A

588

NTE56068

NTE56068

NTE Electronics, Inc.

TRIAC-600VRM 16A ISOLATED

776

NTE5657

NTE5657

NTE Electronics, Inc.

TRIAC SENS GATE 600V 800MA TO92

31052

NTE56008

NTE56008

NTE Electronics, Inc.

TRIAC-600VRM 15A

79

NTE5642

NTE5642

NTE Electronics, Inc.

TRIAC 400V 2.5A TO5

44

NTE56019

NTE56019

NTE Electronics, Inc.

TRIAC-200V 25AMP

145

NTE5643

NTE5643

NTE Electronics, Inc.

TRIAC 600V 2.5A TO5

24

NTE56043

NTE56043

NTE Electronics, Inc.

TRIAC-600V 16A ISOLATED

63

NTE5607

NTE5607

NTE Electronics, Inc.

TRIAC-600VRM 4A

340

NTE5682

NTE5682

NTE Electronics, Inc.

TRIAC 100V 25A TO48

95

NTE56060

NTE56060

NTE Electronics, Inc.

TRIAC-800VRM 16A FULLPACK

79

NTE5671

NTE5671

NTE Electronics, Inc.

TRIAC 800V 16A TO220 FP

748

NTE5629

NTE5629

NTE Electronics, Inc.

TRIAC 400V 4A TO202

351

NTE56049

NTE56049

NTE Electronics, Inc.

TRIAC-500VRM 4A LOW LOGIC

161

NTE5652

NTE5652

NTE Electronics, Inc.

TRIAC SENS GATE 400V 3A TO5

236

NTE56040

NTE56040

NTE Electronics, Inc.

TRIAC-500VRM 4A

187

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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