Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
NTE5620

NTE5620

NTE Electronics, Inc.

TRIAC-8A 800V TO-220F

415

NTE56045

NTE56045

NTE Electronics, Inc.

TRIAC-500VRM 16A FULL-PAK

236

NTE56065

NTE56065

NTE Electronics, Inc.

TRIAC-600VRM 12A ISOLATED

949

NTE5610

NTE5610

NTE Electronics, Inc.

TRIAC-800VRM 8A GATE

704

NTE5636

NTE5636

NTE Electronics, Inc.

TRIAC-500VRM 10A

72

NTE5604

NTE5604

NTE Electronics, Inc.

TRIAC-300VRM 4A

126

NTE56041

NTE56041

NTE Electronics, Inc.

TRIAC-600VRM 4A

77

NTE5685

NTE5685

NTE Electronics, Inc.

TRIAC 400V 25A TO48

4

NTE56067

NTE56067

NTE Electronics, Inc.

TRIAC-800VRM 16A

847

NTE56058

NTE56058

NTE Electronics, Inc.

TRIAC-500VRM 16A FULLPACK

524

NTE5606

NTE5606

NTE Electronics, Inc.

TRIAC-500VRM 4A

134

NTE56052

NTE56052

NTE Electronics, Inc.

TRIAC SENS GATE 600V 8A TO220

374

NTE5688

NTE5688

NTE Electronics, Inc.

TRIAC 200V 40A PRESS FIT

34

NTE5601

NTE5601

NTE Electronics, Inc.

TRIAC-50VRM 4A

64

NTE56059

NTE56059

NTE Electronics, Inc.

TRIAC-600VRM 16A FULLPACK

250

NTE56039

NTE56039

NTE Electronics, Inc.

TRIAC-500VRM 4A

128

NTE5684

NTE5684

NTE Electronics, Inc.

TRIAC 300V 25A TO48

2

NTE5632

NTE5632

NTE Electronics, Inc.

TRIAC-100VRM 10A

206

NTE5609

NTE5609

NTE Electronics, Inc.

TRIAC-600VRM 8A GATE

118

NTE5638-08

NTE5638-08

NTE Electronics, Inc.

TRIAC-800V 8AMP ISO-TO220

312

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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