Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
NTE5646

NTE5646

NTE Electronics, Inc.

TRIAC-600VRM 10A

175

NTE5683

NTE5683

NTE Electronics, Inc.

TRIAC 200V 25A TO48

104

NTE5689

NTE5689

NTE Electronics, Inc.

TRIAC 400V 40A PRESS FIT

52

NTE56051

NTE56051

NTE Electronics, Inc.

TRIAC SENS GATE 500V 8A TO220

357

NTE56050

NTE56050

NTE Electronics, Inc.

TRIAC-600VRM 4A LOW LOGIC

382

NTE5699

NTE5699

NTE Electronics, Inc.

TRIAC 800V 25A TO-220FP

748

NTE56017

NTE56017

NTE Electronics, Inc.

TRIAC-600VRM 25A TO220

110

NTE56014

NTE56014

NTE Electronics, Inc.

TRIAC 25A 400V ISOLATED

81

NTE56016

NTE56016

NTE Electronics, Inc.

TRIAC-400VRM 25A TO220

69

NTE56063

NTE56063

NTE Electronics, Inc.

TRIAC-600VRM 8A ISOLATED

706

NTE56047

NTE56047

NTE Electronics, Inc.

TRIAC-800VRM 16A FULL-PAK

871

NTE5690

NTE5690

NTE Electronics, Inc.

TRIAC 600V 40A PRESS FIT

29

NTE5697

NTE5697

NTE Electronics, Inc.

TRIAC 600V 40A TO48

300

NTE5611

NTE5611

NTE Electronics, Inc.

TRIAC 25V 10A TO127

62

NTE5605

NTE5605

NTE Electronics, Inc.

TRIAC-400VRM 4A

312

NTE5638

NTE5638

NTE Electronics, Inc.

TRIAC-400VRM 8A ISOL.TAB

492

NTE5676

NTE5676

NTE Electronics, Inc.

TRIAC 500V 15A TO48

4

NTE5640

NTE5640

NTE Electronics, Inc.

TRIAC 100V 2.5A TO5

34

NTE5638-06

NTE5638-06

NTE Electronics, Inc.

TRIAC-600V 8A ISO-TO-220

242

NTE5612

NTE5612

NTE Electronics, Inc.

TRIAC 50V 10A TO127

8

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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