Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
NTE56004

NTE56004

NTE Electronics, Inc.

TRIAC-200 VRM 15A

225

NTE5680

NTE5680

NTE Electronics, Inc.

TRIAC 25V 25A TO48

36

NTE56028

NTE56028

NTE Electronics, Inc.

TRIAC 800V 40A TO220

690

NTE5608

NTE5608

NTE Electronics, Inc.

TRIAC-400VRM 8A GATE

1917

NTE56010

NTE56010

NTE Electronics, Inc.

TRIAC-800VRM 15A

17

NTE5695

NTE5695

NTE Electronics, Inc.

TRIAC 400V 40A TO48

36

NTE5645

NTE5645

NTE Electronics, Inc.

TRIAC-600VRM 10A I.TAB

1102

NTE5651

NTE5651

NTE Electronics, Inc.

TRIAC SENS GATE 200V 3A TO5

44

NTE5623

NTE5623

NTE Electronics, Inc.

TRIAC 100V 10A TO127

17

NTE5635

NTE5635

NTE Electronics, Inc.

TRIAC-400VRM 10A

135

NTE5637

NTE5637

NTE Electronics, Inc.

TRIAC-600VRM 10A

772

NTE5675

NTE5675

NTE Electronics, Inc.

TRIAC 400V 15A TO48

43

NTE5603

NTE5603

NTE Electronics, Inc.

TRIAC-200VRM 4A

172

NTE5687

NTE5687

NTE Electronics, Inc.

TRIAC 600V 25A TO48

294

NTE56020

NTE56020

NTE Electronics, Inc.

TRIAC-400V 25A

156

NTE56021

NTE56021

NTE Electronics, Inc.

TRIAC-800VRM 25A TO220ISO

91

NTE5686

NTE5686

NTE Electronics, Inc.

TRIAC 500V 25A TO48

170

NTE56046

NTE56046

NTE Electronics, Inc.

TRIAC-600VRM 16A FULL-PAK

340

NTE56070

NTE56070

NTE Electronics, Inc.

TRIAC-600VRM 25A

648

NTE5631

NTE5631

NTE Electronics, Inc.

TRIAC-50VRM 10A

48

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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