Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMP1345-075LF

SMP1345-075LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC70-3

0

SMS7630-093

SMS7630-093

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 0201

0

SMP1304-004LF

SMP1304-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

0

SMS3926-023LF

SMS3926-023LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SOT143

0

SMPA1304-019LF

SMPA1304-019LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT143-4

0

SMP1304-087LF

SMP1304-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 1W 2QFN

33000

SMS3923-015LF

SMS3923-015LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 20V 75MW SOT143

0

CLA4607-108

CLA4607-108

Skyworks Solutions, Inc.

RF DIODE PIN 120V 250MW

0

SMS3924-075LF

SMS3924-075LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 70V 75MW SC70

24000

SMS7621-096

SMS7621-096

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW 0201

0

DME2333-000

DME2333-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 3V 75MW

0

CLA4605-108

CLA4605-108

Skyworks Solutions, Inc.

RF DIODE PIN 30V 250MW

0

SMS3924-015LF

SMS3924-015LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 70V 75MW SOT143

0

SMP1300-94

SMP1300-94

Skyworks Solutions, Inc.

DIODE

15000

APD0505-219

APD0505-219

Skyworks Solutions, Inc.

RF DIODE PIN 50V CHIP

0

SMS7630-011LF

SMS7630-011LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 75MW SOD323

0

SMP1331-099

SMP1331-099

Skyworks Solutions, Inc.

DIODE PIN ON FILM FRAME

0

SMP1307-099

SMP1307-099

Skyworks Solutions, Inc.

DIODE PIN SGL SOT-23

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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