Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMS7630-006LF

SMS7630-006LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 75MW SOT23

83303

SMP1320-011LF

SMP1320-011LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOD323

2147483647

SMP1334-084LF

SMP1334-084LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 1W 2QFN

43513000

CLA4608-085LF

CLA4608-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 180V 2W 3QFN

82076000

SMP1340-040LF

SMP1340-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

1868

SMP1345-040LF

SMP1345-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

24239

CLA4607-085LF

CLA4607-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 180V 13W 3QFN

11913

SMP1320-079LF

SMP1320-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

5680

SMP1330-040LF

SMP1330-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

137747

SMPA1345-040LF

SMPA1345-040LF

Skyworks Solutions, Inc.

SMPA1345-040LF

0

SMPA1304-011LF

SMPA1304-011LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD323

465

SMP1307-005LF

SMP1307-005LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

5992

SMS7630-040LF

SMS7630-040LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 250MW 0402

2147483647

CLA4605-000

CLA4605-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 30-60V

3700

SMP1302-085LF

SMP1302-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 3W 3QFN

3960

SMS3924-040LF

SMS3924-040LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 70V 75MW SOD882

121179000

SMS7621-005LF

SMS7621-005LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SOT23

84349

SMP1352-040LF

SMP1352-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 750MW 0402

1449261000

SMP1340-079LF

SMP1340-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

53144

SMS7630-079LF

SMS7630-079LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 75MW SC79

25519

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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