Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMP1322-005LF

SMP1322-005LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

8379

SMP1340-007LF

SMP1340-007LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

1278

SMS7621-040LF

SMS7621-040LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 750MW 0402

27460

SMP1307-003LF

SMP1307-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

0

SMP1302-087LF

SMP1302-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 1W 2QFN

294439000

SMSA7630-061

SMSA7630-061

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 75MW 0201

942

SMP1325-087LF

SMP1325-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 2W 2QFN

30006000

CLA4602-000

CLA4602-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 15-30V

700900

SMS3925-040LF

SMS3925-040LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 40V 250MW SOD882

2663000

SMP1302-003LF

SMP1302-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23

0

SMP1325-085LF

SMP1325-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 4.5W 3QFN

0

SMP1331-085LF

SMP1331-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 2.5W 3QFN

560045000

SMP1320-075LF

SMP1320-075LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC70-3

1745

SMP1304-027LF

SMP1304-027LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT5

1459105000

CLA4611-085LF

CLA4611-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 180V 2W 3QFN

29919000

SMP1304-085LF

SMP1304-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 2.5W 3QFN

284018000

SMP1331-079LF

SMP1331-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC79

33000

CLA4606-000

CLA4606-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 45-75V

200

SMS7621-060

SMS7621-060

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW 0201

0

SMSA3923-011LF

SMSA3923-011LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 20V 75MW SOD323

18653

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top