Diodes - RF

Image Part Number Description / PDF Quantity Rfq
CLA4610-085LF

CLA4610-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 120V 10W 3QFN

12874

SMP1330-005LF

SMP1330-005LF

Skyworks Solutions, Inc.

DIODE STANDARD 20V 250MW SOT23-3

1543

SMP1345-079LF

SMP1345-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

1424

SMP1302-078LF

SMP1302-078LF

Skyworks Solutions, Inc.

IC PIN DIODE

0

SMS7630-061

SMS7630-061

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 75MW 0201

0

CLA4603-085LF

CLA4603-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 45V 2W 3QFN

2147483647

SKY16601-555LF

SKY16601-555LF

Skyworks Solutions, Inc.

RF DIODE PIN 45V 1W 2MLP

3841

SMP1352-005LF

SMP1352-005LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

240

SMP1322-001LF

SMP1322-001LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 430MW SOT23

1842030000

SMP1302-074LF

SMP1302-074LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC70

232686000

DME2458-000

DME2458-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 3V 75MW

0

CDB7619-000

CDB7619-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 3V CHIP

0

CLA4610-000

CLA4610-000

Skyworks Solutions, Inc.

RF DIODE PIN 120V 620MW DIE

200

SMP1321-011LF

SMP1321-011LF

Skyworks Solutions, Inc.

SOT23 LOW IND.COMMON ANODE SINGL

106

CLA4611-000

CLA4611-000

Skyworks Solutions, Inc.

RF DIODE PIN 180V 870MW DIE

0

DMJ2833-000

DMJ2833-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 75MW 504-012

100

SMS3930-021LF

SMS3930-021LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SOT143

0

SMP1321-075LF

SMP1321-075LF

Skyworks Solutions, Inc.

RF DIODE PIN 100V 250MW SC70-3

0

SMP1320-077LF

SMP1320-077LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC70-3

0

SMP1340-074LF

SMP1340-074LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC70-3

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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