Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMP1302-001LF

SMP1302-001LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23

15000

SMP1320-004LF

SMP1320-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

0

SMS7621-081LF

SMS7621-081LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SC88

0

SMS3923-011LF

SMS3923-011LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 20V 75MW SOD323

0

SMP1352-011LF

SMP1352-011LF

Skyworks Solutions, Inc.

IC PIN DIODE SOD-323

72000

SMP1321-003LF

SMP1321-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 100V 250MW SOT23

0

SMS3922-004LF

SMS3922-004LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 8V 75MW SOT23

0

SMP1322-017LF

SMP1322-017LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT143-4

0

SMP1340-075LF

SMP1340-075LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC70-3

30000

SMP1321-007LF

SMP1321-007LF

Skyworks Solutions, Inc.

RF DIODE PIN 100V 250MW SOT23

0

SMP1320-007LF

SMP1320-007LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

0

SMP1304-007LF

SMP1304-007LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

0

SMS3927-023LF

SMS3927-023LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SOT143

0

SMS3923-005LF

SMS3923-005LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 20V 75MW SOT23

0

SMP1320-017LF

SMP1320-017LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT143

0

SMP1345-518

SMP1345-518

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW 4MIS

0

SMP1302-075LF

SMP1302-075LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC70-3

0

SMS3922-015LF

SMS3922-015LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 8V 75MW SOT143

0

SMS7621-517

SMS7621-517

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW 4MIS

0

SMS7621-001LF

SMS7621-001LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SOT23

18000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top