Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMS7621-079LF

SMS7621-079LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SC79

68485

SMP1321-005LF

SMP1321-005LF

Skyworks Solutions, Inc.

RF DIODE PIN 100V 250MW SOT23-3

67166000

SMP1371-087LF

SMP1371-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 35V 2W 2QFN

4990

SMP1322-040LF

SMP1322-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOD882

6000

SMP1331-040LF

SMP1331-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD882

8270

SMP1322-079LF

SMP1322-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

17113

SMP1345-004LF

SMP1345-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

118524000

SMS3922-079LF

SMS3922-079LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 8V 75MW SC79

189726000

SMP1320-040LF

SMP1320-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

2233000

CLA4606-085LF

CLA4606-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 75V 3W 3QFN

19410

SMP1307-027LF

SMP1307-027LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT5

563

CLA4605-085LF

CLA4605-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 60V 1W 3QFN

8786

SMP1331-087LF

SMP1331-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 750MW 2QFN

425039000

SMS3922-001LF

SMS3922-001LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 8V 75MW SOT23

12356000

APD1520-000

APD1520-000

Skyworks Solutions, Inc.

RF DIODE PIN 200V DIE

0

CDB7620-000

CDB7620-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V CHIP

0

SMP1307-011LF

SMP1307-011LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD323

0

SMSA7621-060

SMSA7621-060

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW 0201

5112

SMP1307-004LF

SMP1307-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

8999

SMPA1320-079LF

SMPA1320-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

643418000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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