Diodes - RF

Image Part Number Description / PDF Quantity Rfq
APD0505-000

APD0505-000

Skyworks Solutions, Inc.

RF DIODE PIN 50V DIE

1000

SMS7621-092

SMS7621-092

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 75MW 0201

5000

SMP1331-004LF

SMP1331-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

2243

SMPA1302-079LF

SMPA1302-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC79

799

CLA4608-000

CLA4608-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 120-180V

200

SMP1302-040LF

SMP1302-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD882

126097

APD1510-000

APD1510-000

Skyworks Solutions, Inc.

RF DIODE PIN 200V DIE

0

CDF7621-000

CDF7621-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V CHIP

7700

SMP1321-000

SMP1321-000

Skyworks Solutions, Inc.

RF DIODE PIN 100V 250MW SOT23-3

100

SMP1304-005LF

SMP1304-005LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

476051000

SMP1330-085LF

SMP1330-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 3W 3QFN

561836000

SMP1331-003LF

SMP1331-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

18000

APD0520-000

APD0520-000

Skyworks Solutions, Inc.

RF DIODE PIN 50V DIE

2200

CDC7631-000

CDC7631-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW CHIP

700

SMP1324-087LF

SMP1324-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 2W 2QFN

0

SMP1307-006LF

SMP1307-006LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23

0

SMP1345-087LF

SMP1345-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 500MW 2QFN

326436000

APD0810-000

APD0810-000

Skyworks Solutions, Inc.

RF DIODE PIN 100V DIE

0

APD0510-000

APD0510-000

Skyworks Solutions, Inc.

RF DIODE PIN 50V DIE

0

SMP1321-040LF

SMP1321-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 100V 750MW 0402

1256

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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