Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4P7441F-1091T

MA4P7441F-1091T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 30W

0

APD0510-000

APD0510-000

Skyworks Solutions, Inc.

RF DIODE PIN 50V DIE

0

MA4P506-4

MA4P506-4

Metelics (MACOM Technology Solutions)

DIODE,PIN,GLASS,AXIAL,HI-VOLUME

95400

MA4E1338A1-287T

MA4E1338A1-287T

Metelics (MACOM Technology Solutions)

ASSEMBLY,VARACTOR,SOT23-3LD,MA4E

992

SMP1321-040LF

SMP1321-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 100V 750MW 0402

1256

DAN235UT106

DAN235UT106

ROHM Semiconductor

RF DIODE STANDARD 35V 150MW UMD3

2030

SMP1322-005LF

SMP1322-005LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

8379

1SS381,L3F

1SS381,L3F

Toshiba Electronic Devices and Storage Corporation

RF DIODE PIN 30V ESC

0

UPP1004E3/TR7

UPP1004E3/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

MSS40-148-E25

MSS40-148-E25

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E25

75325

UPP1002/TR7

UPP1002/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

SMP1340-007LF

SMP1340-007LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

1278

BAR63-05E6327

BAR63-05E6327

IR (Infineon Technologies)

BAR63 - PIN DIODE

63000

JDP2S02AFS(TPL3)

JDP2S02AFS(TPL3)

Toshiba Electronic Devices and Storage Corporation

RF DIODE PIN 30V FSC

12914

BAP64-06,215

BAP64-06,215

NXP Semiconductors

RF DIODE PIN 175V 250MW TO236AB

5985

MA4L021-1056

MA4L021-1056

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

500

MSS60-448-E45R

MSS60-448-E45R

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45R-1

75275

MA4E2037

MA4E2037

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,BEAM_LEAD,GAAS,OD

300

SMS7621-040LF

SMS7621-040LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 750MW 0402

27460

MSS30-046-P55

MSS30-046-P55

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,CHIP-PACKAGE, P55

7167

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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