Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAT17-06WE6327

BAT17-06WE6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

6000

MBD770DWT1G

MBD770DWT1G

Sanyo Semiconductor/ON Semiconductor

RF DIODE SCHOTTKY 70V 380MW SC88

578336000

VS-C10ET07T-M3

VS-C10ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

992

BAT68E6327HTSA1

BAT68E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT23-3

10042

NSVP249SDSF3T1G

NSVP249SDSF3T1G

Sanyo Semiconductor/ON Semiconductor

DIODE PIN 50V 100MW SC70/MCPH3

1842

MMP7025-11

MMP7025-11

Metelics (MACOM Technology Solutions)

DIODE,PIN,DIE

5000

MADP-011028-14150T

MADP-011028-14150T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 200V 4.3W 6DFN

296012000

LXP1004-23-2

LXP1004-23-2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

214

RN739DT146

RN739DT146

ROHM Semiconductor

RF DIODE PIN 50V 100MW SMD3

2944

MPP4203-206

MPP4203-206

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

BAR6405E6327

BAR6405E6327

PIN DIODE, 150V V(BR)

0

DMV1500MFD

DMV1500MFD

STMicroelectronics

RF DIODE STANDAR 1500V TO220FPAB

0

MA4E1319-1

MA4E1319-1

Metelics (MACOM Technology Solutions)

RF DIODE SCHOTTKY 7V DIE

100

BAT17E6327

BAT17E6327

IR (Infineon Technologies)

BAT17 - RF MIXER AND DETECTOR SC

6000

BAP64-04W-TP

BAP64-04W-TP

Micro Commercial Components (MCC)

RF DIODE PIN 175V 200MW SOT323

0

MLP7120-11

MLP7120-11

Metelics (MACOM Technology Solutions)

LIMITER DIODE,DIE

100

GA01PNS150-220

GA01PNS150-220

GeneSiC Semiconductor

RF DIODE PIN 15000V

7

BAS70-07E6433

BAS70-07E6433

IR (Infineon Technologies)

SCHOTTKY DIODE - HIGH SPEED SWIT

170000

MGS801A

MGS801A

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-GAAS-CHIP-GC110

500

MSWSE-050-10

MSWSE-050-10

Metelics (MACOM Technology Solutions)

SWITCH,RF,0805P_X000D_ PKG

960

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top