Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAR81WE6327

BAR81WE6327

IR (Infineon Technologies)

PIN DIODE

3000

MMBD352LT3G

MMBD352LT3G

MIXER DIODE, UH FREQUENCY

20000

BAR8902LRHE6327XTSA1

BAR8902LRHE6327XTSA1

IR (Infineon Technologies)

PIN DIODE, 80V V(BR)

45000

MA4L031-186

MA4L031-186

Metelics (MACOM Technology Solutions)

RF DIODE PIN 35V CHIP

11100

MA4AGBLP912

MA4AGBLP912

Metelics (MACOM Technology Solutions)

RF DIODE PIN 50V

0

MA4E1339B1-1146T

MA4E1339B1-1146T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

27883000

RN731VTE-17

RN731VTE-17

ROHM Semiconductor

RF DIODE PIN 50V 100MW UMD2

771

SMP1325-085LF

SMP1325-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 4.5W 3QFN

0

SMP1331-085LF

SMP1331-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 2.5W 3QFN

560045000

VS-C06ET07T-M3

VS-C06ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

999

MSS40-448-E45

MSS40-448-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45-1

75

MSS40-448-E45R

MSS40-448-E45R

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45R-1

100

MA4P7470F-1072T

MA4P7470F-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 800V 4W

528

BAR64-03W

BAR64-03W

IR (Infineon Technologies)

BAR64 - PIN DIODE

29275

MSS30-248-B20

MSS30-248-B20

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B20

125

BAR64V-05W-E3-18

BAR64V-05W-E3-18

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 100V SOT323

0

MSS40-045-P86

MSS40-045-P86

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,CHIP,PACKAGE P86

75

BAT1706WH6327XTSA1

BAT1706WH6327XTSA1

IR (Infineon Technologies)

SCHOTTKY DIODE - RF MIXER + DETE

9000

MA4L011-1056

MA4L011-1056

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

275

MA4GP022-277

MA4GP022-277

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP,GAAS

200

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top