Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4P7433CA-287T

MA4P7433CA-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

293612000

SMP1325-087LF

SMP1325-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 2W 2QFN

30006000

BAR6306E6327HTSA1

BAR6306E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

0

VS-C16CP07L-M3

VS-C16CP07L-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-247

500

MA4P161-134

MA4P161-134

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V DIE

200

MPN7453A-C12

MPN7453A-C12

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP, C12

200

JDV2S07FSTPL3

JDV2S07FSTPL3

Toshiba Electronic Devices and Storage Corporation

RF DIODE STANDARD 10V FSC

8766

MGS903

MGS903

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,GAAS-BEAMLEAD,GB3

25

CLA4602-000

CLA4602-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 15-30V

700900

BAR81WH6327XTSA1

BAR81WH6327XTSA1

IR (Infineon Technologies)

DIODE STANDAR 30V 100MW SOT343-4

560

MMBD301-TP

MMBD301-TP

Micro Commercial Components (MCC)

DIODE SCHOTTKY 30V 200MW SOT23

1077

SMS3925-040LF

SMS3925-040LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 40V 250MW SOD882

2663000

MA4E1340A1-1141T

MA4E1340A1-1141T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

294312000

SMP1302-003LF

SMP1302-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23

0

BAP51-06W,115

BAP51-06W,115

NXP Semiconductors

RF DIODE PIN 50V 240MW SOT323

3120

BAT63-07WH6327

BAT63-07WH6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

3000

MA4E2054A1-287T

MA4E2054A1-287T

Metelics (MACOM Technology Solutions)

LEAD FREE VERSION OF MA4E2054A-2

476336000

MA44781

MA44781

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,BONDED,STRIPLINE,

100

MSS20-046-E28

MSS20-046-E28

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E28-S

75

MA4E20541-1141T

MA4E20541-1141T

Metelics (MACOM Technology Solutions)

RF DIODE SCHOTTKY 3V SOD323

265351000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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