Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4P404-30

MA4P404-30

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

100

1SV234-TB-E

1SV234-TB-E

PIN DIODE

112080

SMP1307-003LF

SMP1307-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

0

SMP1302-087LF

SMP1302-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 1W 2QFN

294439000

MA4E1340B1-287T

MA4E1340B1-287T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

0

BAR6304WH6327XTSA1

BAR6304WH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT323-3

0

MSWSHB-020-30

MSWSHB-020-30

Metelics (MACOM Technology Solutions)

SWITCH,PIN DIODE, 2012 PKG

0

BAP51LX,315

BAP51LX,315

NXP Semiconductors

RF DIODE PIN 60V 140MW SOD2

6840

MA47223

MA47223

Metelics (MACOM Technology Solutions)

DIODE,PIN,MODULE,SI,ODS144

24

BAP64-05,215

BAP64-05,215

NXP Semiconductors

RF DIODE PIN 175V 250MW TO236AB

3189

MSS30-154-H27

MSS30-154-H27

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H27

50

BAP64-04,215

BAP64-04,215

NXP Semiconductors

RF DIODE PIN 175V 250MW TO236AB

9073

MMD835-E28

MMD835-E28

Metelics (MACOM Technology Solutions)

DIODE,SRD,MMD835-E28

150

1SV316-TB-E

1SV316-TB-E

PIN DIODE

33000

MADL-011014-001000

MADL-011014-001000

Metelics (MACOM Technology Solutions)

LIMITER HIGH POWER,1.0-2.0GHZ,HE

173

BAT17E6327HTSA1

BAT17E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 150MW SOT23-3

5681

MSS40-448-B42

MSS40-448-B42

Metelics (MACOM Technology Solutions)

COM SCHOTTKY BEAMLEAD, B42

250

MA4P303-1088

MA4P303-1088

Metelics (MACOM Technology Solutions)

PIN,BONDED SL

100

MSWSH-100-30

MSWSH-100-30

Metelics (MACOM Technology Solutions)

SWITCH,RF,CM22 PKG

0

SMSA7630-061

SMSA7630-061

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 75MW 0201

942

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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