Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4P404-132

MA4P404-132

Metelics (MACOM Technology Solutions)

RF DIODE PIN 250V DIE

100

SMP1324-087LF

SMP1324-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 2W 2QFN

0

BAT1705E6327HTSA1

BAT1705E6327HTSA1

IR (Infineon Technologies)

RF MIXER + DETECT SCHOTTKY DIODE

129000

SMP1307-006LF

SMP1307-006LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23

0

MMDL101T1

MMDL101T1

MIXER DIODE

3000

MA40261

MA40261

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,DETECTOR,ODS-186

50

BAP65-02,115

BAP65-02,115

NXP Semiconductors

RF DIODE PIN 30V 715MW SOD523

10885

SMP1345-087LF

SMP1345-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 500MW 2QFN

326436000

MADP-011037-13900T

MADP-011037-13900T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 400V 5W 16HQFN

435000

MBD301G

MBD301G

MIXER DIODE

14662

BAT15-05WH6327XTSA1

BAT15-05WH6327XTSA1

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

3000

BAT1502LRHE6327XTSA1

BAT1502LRHE6327XTSA1

IR (Infineon Technologies)

RF DIODE SCHOTTKY 4V 100MW TSLP2

15000

BA679-GS08

BA679-GS08

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V SOD80 MINIMELF

9639

MA4P506-255

MA4P506-255

Metelics (MACOM Technology Solutions)

PIN, CERAMIC

100

MGS803

MGS803

Metelics (MACOM Technology Solutions)

GAAS SCHOTTKY CHIP

250

BAT15-099R

BAT15-099R

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER, X BAND

766

BAR9002ELE6327XTMA1

BAR9002ELE6327XTMA1

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW TSLP-2-19

11014

MGS802

MGS802

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,GAAS-CHIP,GC210

260250

APD0810-000

APD0810-000

Skyworks Solutions, Inc.

RF DIODE PIN 100V DIE

0

LXP1004-23-0/TR

LXP1004-23-0/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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