Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MPN7420-T55

MPN7420-T55

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP-PACKAGE, T55-1

45

MPN7453B-C22

MPN7453B-C22

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP, C22

150

BA595E6327

BA595E6327

IR (Infineon Technologies)

BA595 - PIN DIODE

4020

VS-C16ET07T-M3

VS-C16ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

988

MA4P7101F-1072T

MA4P7101F-1072T

Metelics (MACOM Technology Solutions)

DIODE,PIN,SMQ,CERAMIC,SI

1434

BAR6305E6327HTSA1

BAR6305E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

4791

SMP1331-003LF

SMP1331-003LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

18000

LXP1002-23-4

LXP1002-23-4

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

200

UPP1001E3/TR7

UPP1001E3/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

SMGS11

SMGS11

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,GAAS-CHIP-PACKAGE

478

APD0520-000

APD0520-000

Skyworks Solutions, Inc.

RF DIODE PIN 50V DIE

2200

BAP51-02,315

BAP51-02,315

NXP Semiconductors

RF DIODE PIN 60V 715MW SOD523

0

BAR6302LE6327XTMA1

BAR6302LE6327XTMA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW TSLP-2

14990

BAP51-02,115

BAP51-02,115

NXP Semiconductors

RF DIODE PIN 60V 715MW SOD523

18240

BA592E6327HTSA1

BA592E6327HTSA1

IR (Infineon Technologies)

RF DIODE STANDARD 35V SOD323-2

25396

MA4P7104B-401

MA4P7104B-401

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC,AZIAL,HI-PAX

500

VS-C04ET07T-M3

VS-C04ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

993

CDC7631-000

CDC7631-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW CHIP

700

JDV2S09FSTPL3

JDV2S09FSTPL3

Toshiba Electronic Devices and Storage Corporation

RF DIODE STANDARD 10V FSC

1652

MSS30-046-C15

MSS30-046-C15

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,CHIP, C15

200

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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