Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAT15-099E6327

BAT15-099E6327

IR (Infineon Technologies)

BAT15 - RF MIXER AND DETECTOR SC

24152

MADP-007436-1146DT

MADP-007436-1146DT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,STR,LEADFREE

300021000

1SV267-FRD-TB-E

1SV267-FRD-TB-E

PIN DIODE

117000

MBD110DWT1G

MBD110DWT1G

MIXER DIODE

42000

APD1510-000

APD1510-000

Skyworks Solutions, Inc.

RF DIODE PIN 200V DIE

0

BAT15099RE6327HTSA1

BAT15099RE6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT143-4

3039

BAT17-05E6327HTSA1

BAT17-05E6327HTSA1

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

12000

MSS20-046-0805

MSS20-046-0805

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,CHIP-PACKAGE, 080

40440

MA4P1450-1091T

MA4P1450-1091T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 10W

5002000

UM7306SM

UM7306SM

Roving Networks / Microchip Technology

RF DIODE PIN 600V 7.5W

9

BA885E6327

BA885E6327

IR (Infineon Technologies)

BA885 - PIN DIODE

12000

JDH2S02FSTPL3

JDH2S02FSTPL3

Toshiba Electronic Devices and Storage Corporation

RF DIODE SCHOTTKY 10V FSC

8304

JDP2S08SC(TPL3)

JDP2S08SC(TPL3)

Toshiba Electronic Devices and Storage Corporation

RF DIODE PIN 30V SC2

5815

BAP64-02,115

BAP64-02,115

NXP Semiconductors

RF DIODE PIN 175V 715MW SOD523

22409

MEST2G-010-20

MEST2G-010-20

Metelics (MACOM Technology Solutions)

COM PIN RF, SWITCH 2012

498

NTE553

NTE553

NTE Electronics, Inc.

D-PIN UHF/VHF SWITCH

2012

CDF7621-000

CDF7621-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V CHIP

7700

MSWSH-020-30

MSWSH-020-30

Metelics (MACOM Technology Solutions)

SWITCH,RF,2012 PKG

345

PMBD353,235

PMBD353,235

Nexperia

RF DIODE SCHOTTKY 4V TO236AB

0

MSS40-448-H40

MSS40-448-H40

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H40

50

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top