Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MGPN1503-C01A

MGPN1503-C01A

Metelics (MACOM Technology Solutions)

GAAS PIN DIODES

200

BAP70AM,135

BAP70AM,135

NXP Semiconductors

RF DIODE PIN 50V 300MW 6TSSOP

0

MPP4202-206

MPP4202-206

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

264

CLA4608-000

CLA4608-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 120-180V

200

MA4P7461F-1072T

MA4P7461F-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 8W

0

MA4L031-134

MA4L031-134

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP,OXIDE

600

MA4L011-1088

MA4L011-1088

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

0

FFAF60A150DSTU

FFAF60A150DSTU

RECTIFIER DIODE

8640

MA4P504-132

MA4P504-132

Metelics (MACOM Technology Solutions)

RF DIODE PIN 500V DIE

300

MSS30-B46-B45

MSS30-B46-B45

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD- B45

100

SMP1302-040LF

SMP1302-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD882

126097

MA4L032-186

MA4L032-186

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

100

MGS902

MGS902

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,GAAS-BEAMLEAD, GB

150

BAT-17-07

BAT-17-07

IR (Infineon Technologies)

MIXER DIODE, VHF TO UHF

3080

MMBD101LT1

MMBD101LT1

DIODE SCHOTTKY 225MW 7V SOT23

255000

MMBV3401LT1

MMBV3401LT1

PIN DIODE, 35V V(BR), TO-236AB

44388

BAP55LX,315

BAP55LX,315

NXP Semiconductors

RF DIODE PIN 50V 135MW 2DFN

12142

MSS40-CR46-B49

MSS40-CR46-B49

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD, B49

100

MA4L101-186

MA4L101-186

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

100

MADP-011027-14150T

MADP-011027-14150T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 3.3W 6DFN

100533000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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