Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAS70-07W

BAS70-07W

IR (Infineon Technologies)

SCHOTTKY DIODE - HIGH SPEED SWIT

51000

BAP64-04W,115

BAP64-04W,115

NXP Semiconductors

RF DIODE PIN 100V 240MW SOT323

4028

BAP50-05W,115

BAP50-05W,115

NXP Semiconductors

RF DIODE PIN 50V 240MW SOT323-3

0

BA679S-M-18

BA679S-M-18

Vishay General Semiconductor – Diodes Division

RF DIODE SOD80 MINIMELF

0

MA47222

MA47222

Metelics (MACOM Technology Solutions)

RF DIODE PIN 150V MODULE

275

MA4GP905

MA4GP905

Metelics (MACOM Technology Solutions)

DIODE,PIN,BEAM_LEAD,HMIC

200

MADP-042308-130600

MADP-042308-130600

Metelics (MACOM Technology Solutions)

DIODE,HMIC,SURMOUNT,PIN,8UM

500

BA885E7631HTMA1

BA885E7631HTMA1

IR (Infineon Technologies)

PIN DIODE, 50V

50000

SMP1331-004LF

SMP1331-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

2243

MMBD355LT1G

MMBD355LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 7V 225MW SOT23-3

4440

VS-C20ET07T-M3

VS-C20ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

972

MADP-011104-TR0500

MADP-011104-TR0500

Metelics (MACOM Technology Solutions)

RF DIODE PIN 800V 12PQFN

499

MMBD701LT1G

MMBD701LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 70V 200MW SOT23-3

5645

MA4E2040

MA4E2040

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,BEAM_LEAD,GAAS,OD

100

MSWSE-005-15

MSWSE-005-15

Metelics (MACOM Technology Solutions)

SWITCH,RF,DFN, 0503 PKG

500

MA4P607-212

MA4P607-212

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP,CERAMIC,SI

1001500

BAS70-05E6433

BAS70-05E6433

IR (Infineon Technologies)

SCHOTTKY DIODE - HIGH SPEED SWIT

210000

MA4P7455-287T

MA4P7455-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

208036000

MMBD352LT1G

MMBD352LT1G

MIXER DIODE, ULTRA HIGH FREQUENC

44584

BAR9002LRHE6327XTSA1

BAR9002LRHE6327XTSA1

IR (Infineon Technologies)

PIN DIODE, 80V V(BR)

2220000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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