Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MMDB30-0402

MMDB30-0402

Metelics (MACOM Technology Solutions)

DIODE,SRD-BEAMLEAD-PACKAGE, 0402

0

RN242CST2R

RN242CST2R

ROHM Semiconductor

RF DIODE PIN 30V VMN2

0

MA4E2054B1-1146T

MA4E2054B1-1146T

Metelics (MACOM Technology Solutions)

SCHOTTKY LOW BARRIER LEAD FREE P

14825

RN142VTE-17

RN142VTE-17

ROHM Semiconductor

RF DIODE PIN 60V UMD2

0

SMPA1302-079LF

SMPA1302-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC79

799

BA479G-TR

BA479G-TR

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V DO35

7797

1SV267-TB-E

1SV267-TB-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 150MW 3CP

293724000

DMV1500HFD

DMV1500HFD

STMicroelectronics

RF DIODE STANDAR 1500V TO220FPAB

0

VS-C20CP07L-M3

VS-C20CP07L-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-247

500

MSS20-046-C15

MSS20-046-C15

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,CHIP, C15

150

PMBD354,215

PMBD354,215

Nexperia

RF DIODE SCHOTTKY 4V TO236AB

2661

1SS390SMFHT2R

1SS390SMFHT2R

ROHM Semiconductor

BAND SWITCHING DIODES (AEC-Q101

7643

BAP50LX,315

BAP50LX,315

NXP Semiconductors

PIN DIODE, 50V

8558

MSS20-141-0402

MSS20-141-0402

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD,0402

25

BAP63-05W,115

BAP63-05W,115

NXP Semiconductors

DIODE PIN 50V 100MA SOT323

8583

BAP70-04W,115

BAP70-04W,115

NXP Semiconductors

PIN DIODE, 50V

1477

MADP-007438-0287FT

MADP-007438-0287FT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,CK,LEADFREE

3000

BAR8802VH6327XTSA1

BAR8802VH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW SC79-2

5952

BA885E6327HTSA1

BA885E6327HTSA1

IR (Infineon Technologies)

BA885 - PIN DIODE

12000

BAP50-03,135

BAP50-03,135

NXP Semiconductors

RF DIODE PIN 50V 500MW SOD323

8587

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top