Diodes - RF

Image Part Number Description / PDF Quantity Rfq
1SS390TE61

1SS390TE61

ROHM Semiconductor

RF DIODE STANDARD 35V 150MW EMD2

538

1SS315TPH3F

1SS315TPH3F

Toshiba Electronic Devices and Storage Corporation

RF DIODE SCHOTTKY 5V USC

0

APD0505-000

APD0505-000

Skyworks Solutions, Inc.

RF DIODE PIN 50V DIE

1000

BA479S-TAP

BA479S-TAP

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V DO35

0

BA592E6433HTMA1

BA592E6433HTMA1

IR (Infineon Technologies)

SILICON RF SWITCHING DIODE

20000

MA4P604-30

MA4P604-30

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

49

MSS20-047-E28X

MSS20-047-E28X

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E28X

7575

UPP1004/TR7

UPP1004/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

CPINU5208-HF

CPINU5208-HF

Comchip Technology

RF DIODE PIN 35V 300MW 0603

4000

MA4L032-134

MA4L032-134

Metelics (MACOM Technology Solutions)

RF DIODE PIN 50V CHIP

100

MA4L301-1056

MA4L301-1056

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

160

MSWSE-020-05

MSWSE-020-05

Metelics (MACOM Technology Solutions)

SWITCH,RF,DFN 0503 PKG

4401000

MADL-011012-001

MADL-011012-001

Metelics (MACOM Technology Solutions)

RF DIODE 360W PWR LIMITER SMD

23

SMS7621-092

SMS7621-092

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 75MW 0201

5000

MSS20-146-B10D

MSS20-146-B10D

Metelics (MACOM Technology Solutions)

DIE, SCHOTTKY DIODE, BEAMLEAD

150

BAT17-04WH6327

BAT17-04WH6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

81900

BAT1502ELSE6327XTSA1

BAT1502ELSE6327XTSA1

IR (Infineon Technologies)

BAT15 - RF MIXER AND DETECTOR SC

48861

MA4P606-131

MA4P606-131

Metelics (MACOM Technology Solutions)

RF DIODE PIN 1000V DIE

200

BAR63-05E6433

BAR63-05E6433

IR (Infineon Technologies)

PIN DIODE, 50V V(BR)

10000

BAT62E6327HTSA1

BAT62E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 40V 100MW SOT143

8899

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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