Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMP1320-075LF

SMP1320-075LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC70-3

1745

MMD820-C12

MMD820-C12

Metelics (MACOM Technology Solutions)

DIODE,SRD-CHIP, C12

200

MA4L021-134

MA4L021-134

Metelics (MACOM Technology Solutions)

RF DIODE PIN 35V CHIP

900

BAR 67-04 E6327

BAR 67-04 E6327

IR (Infineon Technologies)

PIN DIODE, 150V V(BR)

0

SMP1304-027LF

SMP1304-027LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT5

1459105000

MSS40-045-C15

MSS40-045-C15

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-CHIP, C15

300

CLA4611-085LF

CLA4611-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 180V 2W 3QFN

29919000

1PS76SB17,115

1PS76SB17,115

Nexperia

RF DIODE SCHOTTKY 4V SOD323

113901

MMBD352LT1

MMBD352LT1

DIODE SWITCH DUAL 7V SOT23

74400

BAR9002ELSE6327XTSA1

BAR9002ELSE6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW TSSLP-2

45457

BAT15099E6327HTSA1

BAT15099E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT143-4

2921

MA4PK2000

MA4PK2000

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI,ODS1027

50

MA4E1338B1-1146T

MA4E1338B1-1146T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

1651

MPL4700-206

MPL4700-206

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

BAR6502VH6327XTSA1

BAR6502VH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 30V 250MW SC79-2

2884

MSS20-047-E28

MSS20-047-E28

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD-PACKAGE, E

50

BAP142LX,315

BAP142LX,315

NXP Semiconductors

SILICON PIN DIODE

0

MSS30-142-E25

MSS30-142-E25

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E25-1

50

UPP1001/TR7

UPP1001/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

MADP-007438-0287BT

MADP-007438-0287BT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,ST,LEADFREE

28753000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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