Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MADP-000488-13740W

MADP-000488-13740W

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP

200400

1SV298H-TL-E

1SV298H-TL-E

PIN DIODE

555000

MSS50-146-0402

MSS50-146-0402

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, 0402

100100

MA45471

MA45471

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,BONDED,STRIP,SI,O

45

MA4E1338A1-1146T

MA4E1338A1-1146T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

298033000

HSC285TRF-E

HSC285TRF-E

Renesas Electronics America

MIXER DIODE, HIGH FREQUENCY

37985

LM401102-Q-C-301-T

LM401102-Q-C-301-T

Metelics (MACOM Technology Solutions)

MODULE, LIMITER, SURFACE MOUNT,

50

MSS30-254-E30

MSS30-254-E30

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD-PACKAGE, E

50

MADP-000421-12940P

MADP-000421-12940P

Metelics (MACOM Technology Solutions)

DIODE,PIN,SURMOUT,POCKETTAPE

2950

SMP1321-011LF

SMP1321-011LF

Skyworks Solutions, Inc.

SOT23 LOW IND.COMMON ANODE SINGL

106

MA4E2502H-1246

MA4E2502H-1246

Metelics (MACOM Technology Solutions)

RF DIODE SCHOTTKY 5V 50MW DIE

100

BAT1707E6327

BAT1707E6327

IR (Infineon Technologies)

MIXER DIODE, VHF TO UHF

0

MADS-002502-1246LP

MADS-002502-1246LP

Metelics (MACOM Technology Solutions)

LOW BAR POCKET TAPE SURMOUNT CHI

1287

MPP4205A-206/TR

MPP4205A-206/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

MMP4404-GM2/TR

MMP4404-GM2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

HSC277TRF-E-Q

HSC277TRF-E-Q

Renesas Electronics America

DIODE FOR UHF/VHF TUNER

3680

GMP4201-GM1/TR

GMP4201-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MMP4401-GM2/TR

MMP4401-GM2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

HUM2005SM

HUM2005SM

Roving Networks / Microchip Technology

SI PPIN HERMETIC MELF

0

CLA4611-000

CLA4611-000

Skyworks Solutions, Inc.

RF DIODE PIN 180V 870MW DIE

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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