Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MMP4401-GM2

MMP4401-GM2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MPP4205-206/TR

MPP4205-206/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

L5204FR

L5204FR

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 500MW PLASTIC

0

MML4402-GM3/TR

MML4402-GM3/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MMD830-0805

MMD830-0805

Metelics (MACOM Technology Solutions)

DIODE,SRD-CHIP-PACKAGE, 0805-2X

100

DMJ2833-000

DMJ2833-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 75MW 504-012

100

MMD820-0805

MMD820-0805

Metelics (MACOM Technology Solutions)

DIODE,SRD-CHIP-PACKAGE, 0805-2X

125

GMP4211-GM1

GMP4211-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MPL4702-406/TR

MPL4702-406/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

MADP-017015-13140P

MADP-017015-13140P

Metelics (MACOM Technology Solutions)

DIODE,PIN,SURMOUNT

2370

MSS60-848-H40

MSS60-848-H40

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H40

40

MA4P7438CA-287T

MA4P7438CA-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

29756000

MSD720-19-1

MSD720-19-1

Metelics (MACOM Technology Solutions)

DIODE,SRD,EPOXY ENCAPSULATED,CS1

100

MA4E2532M-1113

MA4E2532M-1113

Metelics (MACOM Technology Solutions)

HMIC,SCH,SURMOUNT,MED BAR,RING Q

500

BAT15-05WH6327XTSA3

BAT15-05WH6327XTSA3

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

3000

HSMS-2852-TR1G

HSMS-2852-TR1G

Broadcom

RF DIODE SCHOTTKY 2V SOT23-3

0

HSMP-3812-TR1G

HSMP-3812-TR1G

Broadcom

RF DIODE PIN 100V SOT23-3

0

BA 892-02V E6433

BA 892-02V E6433

IR (Infineon Technologies)

RF DIODE STANDARD 35V SC79-2

0

HSMS-286L-BLKG

HSMS-286L-BLKG

Broadcom

RF DIODE SCHOTTKY 4V SOT363

0

HSMP-386C-TR2G

HSMP-386C-TR2G

Broadcom

RF DIODE PIN 50V SOT323

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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