Diodes - RF

Image Part Number Description / PDF Quantity Rfq
L204BBB

L204BBB

CEL (California Eastern Laboratories)

RF PIN DIODE 28V 200MW AXIAL GLA

0

L204BBT

L204BBT

CEL (California Eastern Laboratories)

RF PIN DIODE 28V 200MW AXIAL GLA

0

HSC277-7TRF-E

HSC277-7TRF-E

Renesas Electronics America

DIODE FOR UHF/VHF TUNER

45515

MA4P604-255

MA4P604-255

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

193

RKS151KJ#P1

RKS151KJ#P1

Renesas Electronics America

RKS151KJ MIXER DIODE

16000

BAT62-02WE6327

BAT62-02WE6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

0

MMP4405-GM2/TR

MMP4405-GM2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

RN731KTL

RN731KTL

ROHM Semiconductor

DIODE PIN 50V

0

MPP4404-206/TR

MPP4404-206/TR

Roving Networks / Microchip Technology

DIODE SI PIN NON HERMETIC MMSM

0

MPP4403-206/TR

MPP4403-206/TR

Roving Networks / Microchip Technology

DIODE SI PIN NON HERMETIC MMSM

0

MA47266-146

MA47266-146

Metelics (MACOM Technology Solutions)

DIODE,PIN,GLASS,AXIAL,HI_VOLUME

100100

MMP4402-GM2

MMP4402-GM2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MML4402-GM2

MML4402-GM2

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

200

GMP4236-GM1/TR

GMP4236-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

GMP4215-GM1/TR

GMP4215-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MSS20-145-B10D

MSS20-145-B10D

Metelics (MACOM Technology Solutions)

ZEROBIAS 18GHZ DIODE SCHTKY B10D

75

BAT62-02WH6327

BAT62-02WH6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

0

MA4E2054L-1261

MA4E2054L-1261

Metelics (MACOM Technology Solutions)

SCHOTTKY_CHIP

7001800

MMP4405-GM2

MMP4405-GM2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

L8107R

L8107R

CEL (California Eastern Laboratories)

RF PIN DIODE 90V 1W CERAMIC MELF

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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