Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4AGP907

MA4AGP907

Metelics (MACOM Technology Solutions)

5 % ALGAAS FLIP CHIP PIN

4001300

MSS25-145-B10D

MSS25-145-B10D

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B10B

150

MADS-001317-1500AG

MADS-001317-1500AG

Metelics (MACOM Technology Solutions)

SCHOTTKY,SOLDERABLE,FC

400

MMD830-T86

MMD830-T86

Metelics (MACOM Technology Solutions)

DIODE,SRD-GLASS,T86 PACKAGE

100

GMP4201-GM1

GMP4201-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

MPL4703-406/TR

MPL4703-406/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

L9204F

L9204F

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W PLASTIC PKG

100

MA4P7437-1141T

MA4P7437-1141T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

277012000

MADP-042305-130600

MADP-042305-130600

Metelics (MACOM Technology Solutions)

DIODE,HMIC,PIN,SURMOUNT,VERTICAL

200

GMP4202-GM1

GMP4202-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

MADS-002502-1246HP

MADS-002502-1246HP

Metelics (MACOM Technology Solutions)

HIGH BAR POCKET TAPE SURMOUNT CH

2930

MPP4206-206

MPP4206-206

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

291

MA4E1310

MA4E1310

Metelics (MACOM Technology Solutions)

GAAS_FLIP_CHIP

500

MMP4403-GM2

MMP4403-GM2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MASW-002100-11910G

MASW-002100-11910G

Metelics (MACOM Technology Solutions)

DIODE,CHIP,HMIC,SP2T,2WATT

200550

MADP-000422-12950P

MADP-000422-12950P

Metelics (MACOM Technology Solutions)

DIODE,PIN,SURMOUNT,POCKETTAPE

30006000

MA4E931Z2-1261A

MA4E931Z2-1261A

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,ZBD,CHIP

300

MA4P7438-287T

MA4P7438-287T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 200V 200MW SOT23-3

116224

MML4401-GM3

MML4401-GM3

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

143

MML4401-GM2

MML4401-GM2

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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