Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MPND4005-B15

MPND4005-B15

Metelics (MACOM Technology Solutions)

DIODE,PIN,BEAMLEAD, B15

100

L8104

L8104

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 3W CERAMIC MEL

99

MPL4702-206/TR

MPL4702-206/TR

Roving Networks / Microchip Technology

DIODE SI LIMITER NON HERMETIC MM

0

DPA05-TA-E

DPA05-TA-E

PIN DI SERIES RS 7 OHM

15000

MML4403-GM3

MML4403-GM3

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

143

GMP4236-GM1

GMP4236-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

MA4E1338B1-287T

MA4E1338B1-287T

Metelics (MACOM Technology Solutions)

8V BARRIER DIODE SOT 23

0

GMP4232-GM1/TR

GMP4232-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

GMP4211-GM1/TR

GMP4211-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MSS60-153-H27

MSS60-153-H27

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD-PACKAGE, H

100

L5206F

L5206F

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 300MW PLASTIC

70

MPL4700-206/TR

MPL4700-206/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

MA4FCP200

MA4FCP200

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100MW DIE

800

NSVP264SDSF3T1G

NSVP264SDSF3T1G

Sanyo Semiconductor/ON Semiconductor

DIODE RF VHF UHF AGC

299039000

CDB7619-000

CDB7619-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 3V CHIP

0

MA4P607-43

MA4P607-43

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

2550

MML4401-GM2/TR

MML4401-GM2/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MSS30-448-H47

MSS30-448-H47

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD,PACKAGE

50

L8107

L8107

CEL (California Eastern Laboratories)

RF PIN DIODE 90V 1W CERAMIC MELF

0

GMP4235-GM1/TR

GMP4235-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top