Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MMD805-0805

MMD805-0805

Metelics (MACOM Technology Solutions)

DIODE,SRD-CHIP-PACKAGE, 0805-2X

100

MA47418-134

MA47418-134

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP,OXIDE

400800

MA4P7447-1141T

MA4P7447-1141T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

900012000

MA4L401-134

MA4L401-134

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP,OXI

200

MPS2R10-606

MPS2R10-606

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

115

MA4L022-30

MA4L022-30

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

100

MSS25-141-0402

MSS25-141-0402

Metelics (MACOM Technology Solutions)

SCHOTTKY-BEAMLEAD-PACKAGE

175325

MSWSE-050-17

MSWSE-050-17

Metelics (MACOM Technology Solutions)

COM PIN-SWITCH-ELEMENT, 0805P

0

MA4E2501L-1290

MA4E2501L-1290

Metelics (MACOM Technology Solutions)

SCHOTTKY.SURMOUNT,SINGLE,SI

600

MA4P709-150

MA4P709-150

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

0

GMP4212-GM1/TR

GMP4212-GM1/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MADP-000402-12530P

MADP-000402-12530P

Metelics (MACOM Technology Solutions)

DIODE,PIN,SURMOUNT

22163000

MADS-002502-1246MP

MADS-002502-1246MP

Metelics (MACOM Technology Solutions)

SCH SURMOUNT IN POCKET TAPE

30003000

MML4403-GM3/TR

MML4403-GM3/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MPP4203-206/TR

MPP4203-206/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

MMP4402-GM2/TR

MMP4402-GM2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MA4E2514M-1116

MA4E2514M-1116

Metelics (MACOM Technology Solutions)

HMIC SURMOUNT SCHOTTKY TEE MEDIU

1200

MPP4201A-206/TR

MPP4201A-206/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

MMP4404-GM2

MMP4404-GM2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

L8104-240

L8104-240

CEL (California Eastern Laboratories)

RF PIN DIODE 240V 3W CERAMIC MEL

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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