Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MPL4703-206/TR

MPL4703-206/TR

Roving Networks / Microchip Technology

DIODE SI LIMITER NON HERMETIC MM

0

L9204FR

L9204FR

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W PLASTIC PKG

0

MMD832-0805

MMD832-0805

Metelics (MACOM Technology Solutions)

DIODE,SRD,MMD832-0805

100225

GMP4215-GM1

GMP4215-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

MA4E2502L-1246

MA4E2502L-1246

Metelics (MACOM Technology Solutions)

RF DIODE SCHOTTKY 5V 50MW DIE

0

MSS25-143-H27

MSS25-143-H27

Metelics (MACOM Technology Solutions)

SCHOTTY DIODE,BEAMLEAD,H27

30

MADS-002054-1146DT

MADS-002054-1146DT

Metelics (MACOM Technology Solutions)

LEAD-FREE SCHOTTKY, DUAL PLASTIC

29809000

MA4P606-36

MA4P606-36

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

50

L407CDB

L407CDB

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W AXIAL GLASS

0

MA4E2514L-1116

MA4E2514L-1116

Metelics (MACOM Technology Solutions)

HMIC SURMOUNT SCHOTTKY TEE

1200

MSS30-248-E35SM

MSS30-248-E35SM

Metelics (MACOM Technology Solutions)

DIODE,SHOTTKY-BEAMLEAD-PACKAGE,E

100100

RKS151KK#R1

RKS151KK#R1

Renesas Electronics America

RKS151KK MIXER DIODE

813361

1SV268-TD-E

1SV268-TD-E

PIN DIODE

16500

SMP1302-074LF

SMP1302-074LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC70

232686000

DME2458-000

DME2458-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 3V 75MW

0

MA47416-132

MA47416-132

Metelics (MACOM Technology Solutions)

PIN CHIP

900

MADS-001318-1197HP

MADS-001318-1197HP

Metelics (MACOM Technology Solutions)

GFCAP1S IN POCKET TAPE

2953

L8104R

L8104R

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 3W CERAMIC MEL

0

MPP4204-206

MPP4204-206

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

MMP4403-GM2/TR

MMP4403-GM2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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