Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAR151E6327HTSA1

BAR151E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 100V 250MW SOT23-3

455

BAP50-04,215

BAP50-04,215

NXP Semiconductors

RF DIODE PIN 50V 250MW TO236AB

0

MSS39-152-H20

MSS39-152-H20

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H20-2

40

MADS-011010-14150T

MADS-011010-14150T

Metelics (MACOM Technology Solutions)

RF DIODE SCHOTTKY 6TDFN

300021000

MPN7380-T83

MPN7380-T83

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP-PACKAGE, T83

50

SMP1322-001LF

SMP1322-001LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 430MW SOT23

1842030000

MMBD301M3T5G

MMBD301M3T5G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 30V 200MW SOT723

2147483647

MADP-007448-0287DT

MADP-007448-0287DT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,STR,LEADFREE

256536000

BAT17,235

BAT17,235

Nexperia

RF DIODE SCHOTTKY 4V TO236AB

9692

MAVR-044769-12790T

MAVR-044769-12790T

Metelics (MACOM Technology Solutions)

VARACTOR,LEAD-FREE,SINGLE,PLASTI

2827

BA479G-TAP

BA479G-TAP

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V DO35

0

L407CDT

L407CDT

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W AXIAL GLASS

0

GMP4232-GM1

GMP4232-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

MADP-000907-14020P

MADP-000907-14020P

Metelics (MACOM Technology Solutions)

DIODE,SOLDERABLE ALGAAS FC PIN

2002852000

MML4403-GM2/TR

MML4403-GM2/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MADS-001317-1278HP

MADS-001317-1278HP

Metelics (MACOM Technology Solutions)

GFCS3S IN POCKET TAPE

0

MPP4201-206/TR

MPP4201-206/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

UMX512

UMX512

Roving Networks / Microchip Technology

SI PPIN HERMETIC MELF

288

MMD820-T86

MMD820-T86

Metelics (MACOM Technology Solutions)

DIODE,SRD-GLASS,T86 PACKAGE

45

MMD805-E25

MMD805-E25

Metelics (MACOM Technology Solutions)

DIODE,SRD-CHIP-PACKAGE, E25

5

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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