Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MML4403-GM2

MML4403-GM2

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

200

MA4L021-120

MA4L021-120

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

0

MSWSS-040-30

MSWSS-040-30

Metelics (MACOM Technology Solutions)

RF DIODE 2012

0

BAT15-098LRH

BAT15-098LRH

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER, X BAND

2998

MSD720-37

MSD720-37

Metelics (MACOM Technology Solutions)

DIODE,SRD,HERMETIC,CS37

25

BAT68E6359HTMA1

BAT68E6359HTMA1

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

30000

MML4402-GM3

MML4402-GM3

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MA4E2532L-1113

MA4E2532L-1113

Metelics (MACOM Technology Solutions)

HMIC SURMOUNT SCHOTTKY RING QUAD

6002200

MSS60-PCR46-B47

MSS60-PCR46-B47

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BL, 46, B47

100

MADL-011011-01340W

MADL-011011-01340W

Metelics (MACOM Technology Solutions)

DIODE,LIMITER,134

500

MPP4204-206/TR

MPP4204-206/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

MPND4005-0402

MPND4005-0402

Metelics (MACOM Technology Solutions)

DIODE,PIN-BEAMLEAD-PACKAGE, 0402

5050

BAT15-05WH6327XTSA2

BAT15-05WH6327XTSA2

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

3000

MA4P7436-1141T

MA4P7436-1141T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

2880

MA4PK3000-1252

MA4PK3000-1252

Metelics (MACOM Technology Solutions)

DIODE,PIN,CHIP,CERAMIC,SI,ODS-12

45

MADP-000502-12700P

MADP-000502-12700P

Metelics (MACOM Technology Solutions)

DIODE,PIN,SURMOUNT

6000

MPP4202-206/TR

MPP4202-206/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

CLA4610-000

CLA4610-000

Skyworks Solutions, Inc.

RF DIODE PIN 120V 620MW DIE

200

MSWSE-044-10

MSWSE-044-10

Metelics (MACOM Technology Solutions)

RF DIODE PIN 300V 0805P

0

L5204F

L5204F

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 500MW PLASTIC

74

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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