Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MSS50-B53-E45

MSS50-B53-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45-1

100225

BAP64-05W,115

BAP64-05W,115

NXP Semiconductors

DIODE PIN 100V 100MA SOT323

308306

MMP7068-37

MMP7068-37

Metelics (MACOM Technology Solutions)

DIODE,PIN,HERMETIC,CS37

50550

MADS-001340-12790T

MADS-001340-12790T

Metelics (MACOM Technology Solutions)

SCHOTTKY, LEAD-FREE, SINGLE, PLA

23186000

MSAT-P25

MSAT-P25

Metelics (MACOM Technology Solutions)

ATTENUATOR,PIN DIODE,2012

173

BAR6704E6327HTSA1

BAR6704E6327HTSA1

IR (Infineon Technologies)

PIN DIODE, 150V

480000

BAT68E6327

BAT68E6327

IR (Infineon Technologies)

BAT68 - RF MIXER AND DETECTOR SC

0

MMP7027-11

MMP7027-11

Metelics (MACOM Technology Solutions)

DIODE,PIN,DIE

300

MMSD301T1

MMSD301T1

MIXER DIODE, VHF TO UHF

59500

MSS20-142-0402

MSS20-142-0402

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, 0402

50

SMPA1320-079LF

SMPA1320-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

643418000

LM202802-M-C-300

LM202802-M-C-300

Metelics (MACOM Technology Solutions)

LIMITER,SURFACE MOUNT MODULE,CS3

10

CLA4610-085LF

CLA4610-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 120V 10W 3QFN

12874

BAP64LX,315

BAP64LX,315

NXP Semiconductors

DIODE SILICON PIN SOD-882T

2300

SMP1330-005LF

SMP1330-005LF

Skyworks Solutions, Inc.

DIODE STANDARD 20V 250MW SOT23-3

1543

NTE555A

NTE555A

NTE Electronics, Inc.

D-VHF BAND SWITCH

267

BAT17-06WH6327

BAT17-06WH6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

6000

MADP-007448-0287AT

MADP-007448-0287AT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

296021000

MA4E932A-186

MA4E932A-186

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,QUAD,SURFACE_MOUN

50

BAS70-07E6327

BAS70-07E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

40200

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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