Diodes - RF

Image Part Number Description / PDF Quantity Rfq
1SV233-TB-E

1SV233-TB-E

PIN DIODE

18000

APD1520-000

APD1520-000

Skyworks Solutions, Inc.

RF DIODE PIN 200V DIE

0

MPS2R11-608

MPS2R11-608

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

108

CPINF5204-HF

CPINF5204-HF

Comchip Technology

RF DIODE PIN 180V 500MW 1005

4000

MADP-017015-13140G

MADP-017015-13140G

Metelics (MACOM Technology Solutions)

RF DIODE PIN 115V

2001500

BAP64-03,115

BAP64-03,115

NXP Semiconductors

RF DIODE PIN 175V 500MW SOD323

2313

BAR8802LRHE6327XTSA1

BAR8802LRHE6327XTSA1

IR (Infineon Technologies)

PIN DIODE, 80V V(BR)

2115000

MADP-007436-12790T

MADP-007436-12790T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

300015000

CDB7620-000

CDB7620-000

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V CHIP

0

SMP1307-011LF

SMP1307-011LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD323

0

BAP63-03,115

BAP63-03,115

NXP Semiconductors

BAP63-03 - PIN DIODE, 50V V(BR)

0

MA4E1340A1-287T

MA4E1340A1-287T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

277030000

MSS20-047-H27

MSS20-047-H27

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H27

40

HMPP-389T-TR1

HMPP-389T-TR1

Broadcom

RF DIODE PIN 100V MINIPAK

2371

MA47047-54

MA47047-54

Metelics (MACOM Technology Solutions)

DIODE,PIN,GLASS,AXIAL,HI_VOLUME

16

BAP64-05-TP

BAP64-05-TP

Micro Commercial Components (MCC)

RF DIODE PIN 175V 250MW SOT23

0

1SV251-TB-E

1SV251-TB-E

PIN DIODE

27000

BA679S-GS08

BA679S-GS08

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V SOD80 MINIMELF

2418

MGS901

MGS901

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,GAAS-BEAMLEAD, GB

150

MLP7100-11

MLP7100-11

Metelics (MACOM Technology Solutions)

LIMITER DIODE,DIE

200

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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