Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MSS20-051-E28X

MSS20-051-E28X

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E28X

50

MSS39-045-C15

MSS39-045-C15

Metelics (MACOM Technology Solutions)

COM SCHOTTKY CHIP

200

MSS20-046-H27

MSS20-046-H27

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,CHIP-PACKAGE H27

50

MA4P7464F-1072T

MA4P7464F-1072T

Metelics (MACOM Technology Solutions)

DIODE, PIN, MRI APPLICATION

290010500

RN779FFHT106

RN779FFHT106

ROHM Semiconductor

RF DIODE PIN 50V UMD3

0

DAN235ETL

DAN235ETL

ROHM Semiconductor

RF DIODE STANDARD 35V 150MW EMD3

3434

MMBD354LT1G

MMBD354LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 7V 225MW SOT23-3

6000

1SV249-TL-E

1SV249-TL-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 100MW 3MCP

251221000

MMDB45-B11

MMDB45-B11

Metelics (MACOM Technology Solutions)

DIODE,SRD,BEAMLEAD,B11

75275

JDV2S41FS(TPL3)

JDV2S41FS(TPL3)

Toshiba Electronic Devices and Storage Corporation

RF DIODE STANDARD 15V FSC

17329

BAR6503WE6327HTSA1

BAR6503WE6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 30V 250MW SOD323-2

2715

SMP1345-079LF

SMP1345-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

1424

MLP7131-11

MLP7131-11

Metelics (MACOM Technology Solutions)

LIMITER DIODE, DIE

200

MMBD301LT1

MMBD301LT1

DIODE SCHOTTKY 200MW 30V SOT23

20369

BA679S-GS18

BA679S-GS18

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V SOD80 MINIMELF

0

MMP7067-11

MMP7067-11

Metelics (MACOM Technology Solutions)

DIE, PIN DIODE

100

SMP1302-078LF

SMP1302-078LF

Skyworks Solutions, Inc.

IC PIN DIODE

0

MADP-007448-1146DT

MADP-007448-1146DT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,STR

799018000

MA4P7455-1225T

MA4P7455-1225T

Metelics (MACOM Technology Solutions)

RF DIODE PIN SOT25

29829000

MBD330DWT1

MBD330DWT1

DIODE SCHOTTKY DUAL 30V SOT-363

24000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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