Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BA679-GS18

BA679-GS18

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V SOD80 MINIMELF

9908

MADP-030015-13140G

MADP-030015-13140G

Metelics (MACOM Technology Solutions)

RF DIODE PIN 115V

500

BAP70-02,115

BAP70-02,115

NXP Semiconductors

RF DIODE PIN 50V 415MW SOD523

6252

UPP9401E3/TR7

UPP9401E3/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 50V 2.5W DO216

0

MADP-008120-12790T

MADP-008120-12790T

Metelics (MACOM Technology Solutions)

PIN DIODE,SILICON,PLASTIC,SC-79,

267324000

MA4E1339A1-1146T

MA4E1339A1-1146T

Metelics (MACOM Technology Solutions)

ASSEMBLY,SCHOTTKY,MA4E1339A1-114

287533000

MLP7110-11

MLP7110-11

Metelics (MACOM Technology Solutions)

LIMITER DIODE,DIE

200

MA4P7437-287T

MA4P7437-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

2405

MA2JP0200L

MA2JP0200L

Panasonic

RF DIODE PIN 60V 150MW SMINI2-F1

85131

RN739FT106

RN739FT106

ROHM Semiconductor

RF DIODE PIN 50V 100MW UMD3

6156

MSS30-442-E45

MSS30-442-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45-1

89

VS-C12ET07T-M3

VS-C12ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

992

MPN3404G

MPN3404G

PIN DIODE, 20V V(BR), TO-92

4188

BAP64-06W,115

BAP64-06W,115

NXP Semiconductors

BAP64-06W - PIN DIODE, 100V

321122

MSS40-248-B20

MSS40-248-B20

Metelics (MACOM Technology Solutions)

DIODE SCHOTTKY-BEAMLEAD , B20

150325

MA4P7433-287T

MA4P7433-287T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 75V 250MW SOT23-3

2147483647

BAR 63-06W H6327

BAR 63-06W H6327

IR (Infineon Technologies)

RF PIN DIODE > ANTENNA SWITCH

3000

MA4P4006B-402

MA4P4006B-402

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC,AXIAL,HI-PAX

0

MSS39-045-P86

MSS39-045-P86

Metelics (MACOM Technology Solutions)

DIODE, SCHOTTKY, CHIP, P86

50

CPINUC5206-HF

CPINUC5206-HF

Comchip Technology

RF DIODE PIN 180V 300MW 0603C

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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