Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4L062-134

MA4L062-134

Metelics (MACOM Technology Solutions)

DIODE,PINLIMITER,CHIP

90039300

MMVL3401T1G

MMVL3401T1G

PIN DIODE, 35V V(BR)

948535

MA4PH237-1079T

MA4PH237-1079T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 200V 2W

624

MPP4201-206

MPP4201-206

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

254

UPP9401E3/TR13

UPP9401E3/TR13

Microsemi

RF DIODE PIN 50V 2.5W DO216

0

SMSA7621-060

SMSA7621-060

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW 0201

5112

MPND4005-B16

MPND4005-B16

Metelics (MACOM Technology Solutions)

DIODE,PIN-BEAMLEAD, B16

1251100

MMBV3401LT1G

MMBV3401LT1G

PIN DIODE, 35V V(BR), TO-236AB

435841

BAP51-05W,115

BAP51-05W,115

NXP Semiconductors

BAP51-05W - PIN DIODE, 50V

21000

UPP1002E3/TR13

UPP1002E3/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

BAT17,215

BAT17,215

Nexperia

RF DIODE SCHOTTKY 4V TO236AB

10097

BA679-M-18

BA679-M-18

Vishay General Semiconductor – Diodes Division

RF DIODE SOD80 MINIMELF

0

SMP1307-004LF

SMP1307-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT23-3

8999

VS-C08ET07T-M3

VS-C08ET07T-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-220

990

MLP7130-11

MLP7130-11

Metelics (MACOM Technology Solutions)

LIMITER DIODE,DIE

400

MA4P506-1072T

MA4P506-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 500V 15W

84

BAR6305WH6327XTSA1

BAR6305WH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

4800

BA679-M-08

BA679-M-08

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V SOD80 MINIMELF

0

MA4E2508M-1112

MA4E2508M-1112

Metelics (MACOM Technology Solutions)

SCHOTTKY,SURMOUNT,ANTI-PAR,MED B

0

UPP1004/TR13

UPP1004/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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