Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAR65-03WE6327

BAR65-03WE6327

IR (Infineon Technologies)

BAR65 - PIN DIODE

75000

MPL4703-406

MPL4703-406

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

MEST2G-080-025

MEST2G-080-025

Metelics (MACOM Technology Solutions)

SCHOTTKY, SI BEAM LEAD,CM27

25

MA4P4001F-1091T

MA4P4001F-1091T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 7.5W

3941000

MMP7065-11

MMP7065-11

Metelics (MACOM Technology Solutions)

DIE, DIODE, PIN

0

MA4P505-1072T

MA4P505-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 500V 15W

1032

BAT1707E6327HTSA1

BAT1707E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 150MW SOT143-4

5716

NTE174

NTE174

NTE Electronics, Inc.

GE-DAMPER DIODE

3976

BAP65-02,135

BAP65-02,135

NXP Semiconductors

RF DIODE PIN 30V 715MW SOD523

0

MSWSHC-040-40

MSWSHC-040-40

Metelics (MACOM Technology Solutions)

DIODE,PIN SWITCH,2615

0

BA892-02VE6327

BA892-02VE6327

IR (Infineon Technologies)

RECTIFIER DIODE, 35V

15000

MA4P7433CK-287T

MA4P7433CK-287T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 75V 250MW SOT23-3

193515000

BAP70Q,125

BAP70Q,125

NXP Semiconductors

RF DIODE PIN 50V 125MW 5TSOP

0

MSS30-B53-E45

MSS30-B53-E45

Metelics (MACOM Technology Solutions)

COM, SCHOTTKY-BEAMLEAD-PKG E45-1

75500

BAR6406WH6327XTSA1

BAR6406WH6327XTSA1

IR (Infineon Technologies)

BAR64 - PIN DIODE

501000

MSS30-346-B21

MSS30-346-B21

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD- B21

100

BA277,115

BA277,115

NXP Semiconductors

MIXER DIODE, VERY HIGH FREQUENCY

0

BAT62-02LSE6327

BAT62-02LSE6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

268793

MA4P202-276

MA4P202-276

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

100

MSS60-B53-E45

MSS60-B53-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY,HIGH BARRIER, BRIDGE QU

50

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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